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NVMTS1D6N10MCTXG onsemi

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onsemi

NVMTS1D6N10MCTXG

N-Channel 100 V 36A (Ta), 273A (Tc) 5W (Ta), 291W (Tc) Surface Mount 8-DFNW (8.3x8.4)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNVMTS1D6N10MCTXG
DescriptionN-Channel 100 V 36A (Ta), 273A (Tc) 5W (Ta), 291W (Tc) Surface Mount 8-DFNW (8.3x8.4)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 7.24USD 7.24
10USD 6.9866USD 69.866
25USD 6.7332USD 168.33
100USD 6.4798USD 647.98
250USD 6.2264USD 1,556.60
500USD 5.973USD 2,986.50
1,000USD 5.7196USD 5,719.60
  • Product Attributes
  • Ordering Notes

N-Channel 100 V 36A (Ta), 273A (Tc) 5W (Ta), 291W (Tc) Surface Mount 8-DFNW (8.3x8.4)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesAutomotive, AEC-Q101
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C36A (Ta), 273A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs106 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7630 pF @ 50 V
FET Feature-
Power Dissipation (Max)5W (Ta), 291W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-DFNW (8.3x8.4)
Package / Case8-PowerTDFN
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