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NVTFS6H880NLWFTAG onsemi

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NVTFS6H880NLWFTAG

N-Channel 80 V 6.6A (Ta), 22A (Tc) 3.1W (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
Manufactureronsemi
Manufacturer Product NumberNVTFS6H880NLWFTAG
DescriptionN-Channel 80 V 6.6A (Ta), 22A (Tc) 3.1W (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.89000USD 0.89000
10USD 0.85885USD 8.5885
25USD 0.82770USD 20.6925
100USD 0.79655USD 79.655
250USD 0.76540USD 191.35
500USD 0.73425USD 367.125
1,000USD 0.70310USD 703.10
  • Product Attributes
  • Ordering Notes

N-Channel 80 V 6.6A (Ta), 22A (Tc) 3.1W (Ta), 33W (Tc) Surface Mount 8-WDFN (3.3x3.3)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
SeriesAutomotive, AEC-Q101
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80 V
Current - Continuous Drain (Id) @ 25°C6.6A (Ta), 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs29mOhm @ 5A, 10V
Vgs(th) (Max) @ Id2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs9 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds431 pF @ 40 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN
Base Product NumberNVTFS6
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