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NXH100B120H3Q0SG onsemi

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onsemi

NXH100B120H3Q0SG

IGBT Module Trench Field Stop 2 Independent 1200 V 61 A 186 W Chassis Mount 22-PIM/Q0BOOST (55x32.5)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Modules
Manufactureronsemi
Manufacturer Product NumberNXH100B120H3Q0SG
DescriptionIGBT Module Trench Field Stop 2 Independent 1200 V 61 A 186 W Chassis Mount 22-PIM/Q0BOOST (55x32.5)
CategoryTransistors - IGBTs - Modules
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 60.87USD 60.87
10USD 58.73955USD 587.3955
25USD 56.6091USD 1,415.2275
100USD 54.47865USD 5,447.865
250USD 52.3482USD 13,087.05
500USD 50.21775USD 25,108.875
1,000USD 48.0873USD 48,087.30
  • Product Attributes
  • Ordering Notes

IGBT Module Trench Field Stop 2 Independent 1200 V 61 A 186 W Chassis Mount 22-PIM/Q0BOOST (55x32.5)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTray
Product StatusActive
IGBT TypeTrench Field Stop
Configuration2 Independent
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)61 A
Power - Max186 W
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 50A
Current - Collector Cutoff (Max)200 µA
Input Capacitance (Cies) @ Vce9.075 nF @ 20 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package22-PIM/Q0BOOST (55x32.5)
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