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NXH200T120H3Q2F2STG onsemi
NXH200T120H3Q2F2STG onsemi

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onsemi

NXH200T120H3Q2F2STG

IGBT Module Trench Field Stop Half Bridge 1200 V 330 A 679 W Chassis Mount 56-PIM/Q2PACK (93x47)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Modules
Manufactureronsemi
Manufacturer Product NumberNXH200T120H3Q2F2STG
DescriptionIGBT Module Trench Field Stop Half Bridge 1200 V 330 A 679 W Chassis Mount 56-PIM/Q2PACK (93x47)
CategoryTransistors - IGBTs - Modules
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

IGBT Module Trench Field Stop Half Bridge 1200 V 330 A 679 W Chassis Mount 56-PIM/Q2PACK (93x47)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTray
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)330 A
Power - Max679 W
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 200A
Current - Collector Cutoff (Max)500 µA
Input Capacitance (Cies) @ Vce35.615 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package56-PIM/Q2PACK (93x47)
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