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NXH50C120L2C2ESG onsemi

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NXH50C120L2C2ESG

IGBT Module Three Phase Inverter with Brake 1200 V 50 A 20 mW Through Hole 26-DIP

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Modules
Manufactureronsemi
Manufacturer Product NumberNXH50C120L2C2ESG
DescriptionIGBT Module Three Phase Inverter with Brake 1200 V 50 A 20 mW Through Hole 26-DIP
CategoryTransistors - IGBTs - Modules
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 81.98USD 81.98
10USD 79.1107USD 791.107
25USD 76.2414USD 1,906.035
100USD 73.3721USD 7,337.21
250USD 70.5028USD 17,625.70
500USD 67.6335USD 33,816.75
1,000USD 64.7642USD 64,764.20
  • Product Attributes
  • Ordering Notes

IGBT Module Three Phase Inverter with Brake 1200 V 50 A 20 mW Through Hole 26-DIP

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
IGBT Type-
ConfigurationThree Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)50 A
Power - Max20 mW
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 50A
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce11.897 nF @ 20 V
InputThree Phase Bridge Rectifier
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Case26-PowerDIP Module (1.199", 47.20mm)
Supplier Device Package26-DIP
Base Product NumberNXH50
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