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NXH50M65L4C2ESG onsemi
NXH50M65L4C2ESG onsemi

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onsemi

NXH50M65L4C2ESG

IGBT Module Three Phase Inverter 650 V 50 A 20 mW Through Hole 27-DIP

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Modules
Manufactureronsemi
Manufacturer Product NumberNXH50M65L4C2ESG
DescriptionIGBT Module Three Phase Inverter 650 V 50 A 20 mW Through Hole 27-DIP
CategoryTransistors - IGBTs - Modules
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 82.83USD 82.83
10USD 79.93095USD 799.3095
25USD 77.0319USD 1,925.7975
100USD 74.13285USD 7,413.285
250USD 71.2338USD 17,808.45
500USD 68.33475USD 34,167.375
1,000USD 65.4357USD 65,435.70
  • Product Attributes
  • Ordering Notes

IGBT Module Three Phase Inverter 650 V 50 A 20 mW Through Hole 27-DIP

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
IGBT Type-
ConfigurationThree Phase Inverter
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)50 A
Power - Max20 mW
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 75A
Current - Collector Cutoff (Max)250 µA
Input Capacitance (Cies) @ Vce2.608 nF @ 20 V
InputSingle Phase Bridge Rectifier
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Case27-PowerDIP Module (1.858", 47.20mm)
Supplier Device Package27-DIP
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