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onsemi

NXH50M65L4C2SG

IGBT Module Three Phase Inverter 650 V 50 A 20 mW Through Hole 27-DIP

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - IGBTs - Modules

Manufactureronsemi

Manufacturer Product NumberNXH50M65L4C2SG

DescriptionIGBT Module Three Phase Inverter 650 V 50 A 20 mW Through Hole 27-DIP

CategoryTransistors - IGBTs - Modules

EDA / CAD Models

Price & AvailabilityQuote Required

IGBT Module Three Phase Inverter 650 V 50 A 20 mW Through Hole 27-DIP

Mfronsemi

Series-

PackageTube

Product StatusActive

IGBT Type-

ConfigurationThree Phase Inverter

Voltage - Collector Emitter Breakdown (Max)650 V

Current - Collector (Ic) (Max)50 A

Power - Max20 mW

Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 75A

Current - Collector Cutoff (Max)250 µA

Input Capacitance (Cies) @ Vce4.877 nF @ 20 V

InputSingle Phase Bridge Rectifier

NTC ThermistorYes

Operating Temperature-40°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Package / Case27-PowerDIP Module (1.858", 47.20mm)

Supplier Device Package27-DIP