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NXH80T120L3Q0S3G onsemi

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onsemi

NXH80T120L3Q0S3G

IGBT Module Trench Field Stop Half Bridge 1200 V 75 A 188 W Chassis Mount 20-PIM/Q0PACK (55x32.5)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - IGBTs - Modules
Manufactureronsemi
Manufacturer Product NumberNXH80T120L3Q0S3G
DescriptionIGBT Module Trench Field Stop Half Bridge 1200 V 75 A 188 W Chassis Mount 20-PIM/Q0PACK (55x32.5)
CategoryTransistors - IGBTs - Modules
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 68.61USD 68.61
10USD 66.20865USD 662.0865
25USD 63.8073USD 1,595.1825
100USD 61.40595USD 6,140.595
250USD 59.0046USD 14,751.15
500USD 56.60325USD 28,301.625
1,000USD 54.2019USD 54,201.90
  • Product Attributes
  • Ordering Notes

IGBT Module Trench Field Stop Half Bridge 1200 V 75 A 188 W Chassis Mount 20-PIM/Q0PACK (55x32.5)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTray
Product StatusActive
IGBT TypeTrench Field Stop
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)75 A
Power - Max188 W
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 80A
Current - Collector Cutoff (Max)300 µA
Input Capacitance (Cies) @ Vce18.15 nF @ 20 V
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device Package20-PIM/Q0PACK (55x32.5)
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