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PN2907BU

Bipolar (BJT) Transistor PNP 40 V 800 mA 625 mW Through Hole TO-92-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberPN2907BU
DescriptionBipolar (BJT) Transistor PNP 40 V 800 mA 625 mW Through Hole TO-92-3
CategoryTransistors - Bipolar (BJT) - Single
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.49000USD 0.49000
10USD 0.47285USD 4.7285
25USD 0.45570USD 11.3925
100USD 0.43855USD 43.855
250USD 0.42140USD 105.35
500USD 0.40425USD 202.125
1,000USD 0.38710USD 387.10
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor PNP 40 V 800 mA 625 mW Through Hole TO-92-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageBulk
Product StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Power - Max625 mW
Frequency - Transition-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Base Product NumberPN2907
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