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TIP102G onsemi

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TIP102G

Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 2 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberTIP102G
DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 8 A 2 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.42USD 1.42
10USD 1.3703USD 13.703
25USD 1.3206USD 33.015
100USD 1.2709USD 127.09
250USD 1.2212USD 305.30
500USD 1.1715USD 585.75
1,000USD 1.1218USD 1,121.80
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 2 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic2.5V @ 80mA, 8A
Current - Collector Cutoff (Max)50µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 3A, 4V
Power - Max2 W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberTIP102
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