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TIP110G onsemi

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TIP110G

Bipolar (BJT) Transistor NPN - Darlington 60 V 2 A 2 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
Manufactureronsemi
Manufacturer Product NumberTIP110G
DescriptionBipolar (BJT) Transistor NPN - Darlington 60 V 2 A 2 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.92000USD 0.92000
10USD 0.88780USD 8.878
25USD 0.85560USD 21.39
100USD 0.82340USD 82.34
250USD 0.79120USD 197.80
500USD 0.75900USD 379.50
1,000USD 0.72680USD 726.80
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN - Darlington 60 V 2 A 2 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
Mfronsemi
Series-
PackageTube
Product StatusActive
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)60 V
Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 4V
Power - Max2 W
Frequency - Transition-
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberTIP110
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