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onsemi

TIP147G

Bipolar (BJT) Transistor PNP - Darlington 100 V 10 A 125 W Through Hole TO-247-3

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

Manufactureronsemi

Manufacturer Product NumberTIP147G

DescriptionBipolar (BJT) Transistor PNP - Darlington 100 V 10 A 125 W Through Hole TO-247-3

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor PNP - Darlington 100 V 10 A 125 W Through Hole TO-247-3

Mfronsemi

Series-

PackageTube

Product StatusActive

Transistor TypePNP - Darlington

Current - Collector (Ic) (Max)10 A

Voltage - Collector Emitter Breakdown (Max)100 V

Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 10A

Current - Collector Cutoff (Max)2mA

DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A, 4V

Power - Max125 W

Frequency - Transition-

Operating Temperature-65°C ~ 150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-247-3

Supplier Device PackageTO-247-3

Base Product NumberTIP147