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2N3019 STMicroelectronics

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STMicroelectronics

2N3019

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 800 mW Through Hole TO-39

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
ManufacturerSTMicroelectronics
Manufacturer Product Number2N3019
DescriptionBipolar (BJT) Transistor NPN 80 V 1 A 100MHz 800 mW Through Hole TO-39
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 800 mW Through Hole TO-39

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Power - Max800 mW
Frequency - Transition100MHz
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-205AD, TO-39-3 Metal Can
Supplier Device PackageTO-39
Base Product Number2N30
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