GQGF Electronics
EnglishEnglish
USD
BD139-10 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

BD139-10

Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberBD139-10
DescriptionBipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.43000USD 0.43000
10USD 0.41495USD 4.1495
25USD 0.39990USD 9.9975
100USD 0.38485USD 38.485
250USD 0.36980USD 92.45
500USD 0.35475USD 177.375
1,000USD 0.33970USD 339.70
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 80 V 1.5 A 1.25 W Through Hole SOT-32

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)80 V
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 2V
Power - Max1.25 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-225AA, TO-126-3
Supplier Device PackageSOT-32
Base Product NumberBD139
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7