GQGF Electronics
EnglishEnglish
USD
BDW83C-TO218 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

BDW83C-TO218

Bipolar (BJT) Transistor NPN - Darlington 100 V 15 A 130 W Through Hole TO-218

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberBDW83C-TO218
DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 15 A 130 W Through Hole TO-218
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN - Darlington 100 V 15 A 130 W Through Hole TO-218

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusObsolete
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic4V @ 150mA, 15A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 6A, 3V
Power - Max130 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-218-3, TO-218AC
Supplier Device PackageTO-218
Base Product NumberBDW83
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7