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BUL216 STMicroelectronics

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STMicroelectronics

BUL216

Bipolar (BJT) Transistor NPN 800 V 4 A 90 W Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberBUL216
DescriptionBipolar (BJT) Transistor NPN 800 V 4 A 90 W Through Hole TO-220
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.49USD 2.49
10USD 2.40285USD 24.0285
25USD 2.3157USD 57.8925
100USD 2.22855USD 222.855
250USD 2.1414USD 535.35
500USD 2.05425USD 1,027.125
1,000USD 1.9671USD 1,967.10
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 800 V 4 A 90 W Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)800 V
Vce Saturation (Max) @ Ib, Ic3V @ 660mA, 2A
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce12 @ 400mA, 5V
Power - Max90 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220
Base Product NumberBUL216
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