GQGF Electronics
EnglishEnglish
USD
BULB128-1 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

BULB128-1

Bipolar (BJT) Transistor NPN 400 V 4 A 70 W Through Hole TO-262

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberBULB128-1
DescriptionBipolar (BJT) Transistor NPN 400 V 4 A 70 W Through Hole TO-262
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.70000USD 0.70000
10USD 0.67550USD 6.755
25USD 0.65100USD 16.275
100USD 0.62650USD 62.65
250USD 0.60200USD 150.50
500USD 0.57750USD 288.75
1,000USD 0.55300USD 553.00
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 400 V 4 A 70 W Through Hole TO-262

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)400 V
Vce Saturation (Max) @ Ib, Ic500mV @ 1A, 4A
Current - Collector Cutoff (Max)250µA
DC Current Gain (hFE) (Min) @ Ic, Vce14 @ 2A, 5V
Power - Max70 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262
Base Product NumberBULB128
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7