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BUT100 STMicroelectronics
BUT100 STMicroelectronics

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STMicroelectronics

BUT100

Bipolar (BJT) Transistor NPN 125 V 50 A 300 W Through Hole TO-3

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberBUT100
DescriptionBipolar (BJT) Transistor NPN 125 V 50 A 300 W Through Hole TO-3
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
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Bipolar (BJT) Transistor NPN 125 V 50 A 300 W Through Hole TO-3

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)125 V
Vce Saturation (Max) @ Ib, Ic900mV @ 10A, 100A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max300 W
Frequency - Transition-
Operating Temperature200°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-204AA, TO-3
Supplier Device PackageTO-3
Base Product NumberBUT100
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