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IRF630 STMicroelectronics

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STMicroelectronics

IRF630

N-Channel 200 V 9A (Tc) 75W (Tc) Through Hole TO-220

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberIRF630
DescriptionN-Channel 200 V 9A (Tc) 75W (Tc) Through Hole TO-220
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 1.61USD 1.61
10USD 1.55365USD 15.5365
25USD 1.4973USD 37.4325
100USD 1.44095USD 144.095
250USD 1.3846USD 346.15
500USD 1.32825USD 664.125
1,000USD 1.2719USD 1,271.90
  • Product Attributes
  • Ordering Notes

N-Channel 200 V 9A (Tc) 75W (Tc) Through Hole TO-220

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMESH OVERLAY™ II
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds700 pF @ 25 V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-65°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3
Base Product NumberIRF6
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