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L603C STMicroelectronics

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STMicroelectronics

L603C

Bipolar (BJT) Transistor Array 8 NPN Darlington 90V 400mA 1.8W Through Hole 18-DIP

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Arrays
ManufacturerSTMicroelectronics
Manufacturer Product NumberL603C
DescriptionBipolar (BJT) Transistor Array 8 NPN Darlington 90V 400mA 1.8W Through Hole 18-DIP
CategoryTransistors - Bipolar (BJT) - Arrays
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
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Bipolar (BJT) Transistor Array 8 NPN Darlington 90V 400mA 1.8W Through Hole 18-DIP

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusObsolete
Transistor Type8 NPN Darlington
Current - Collector (Ic) (Max)400mA
Voltage - Collector Emitter Breakdown (Max)90V
Vce Saturation (Max) @ Ib, Ic2V @ 500µA, 300mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce-
Power - Max1.8W
Frequency - Transition-
Operating Temperature-25°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package / Case-
Supplier Device Package18-DIP
Base Product NumberL603
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