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MD2001FX STMicroelectronics

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STMicroelectronics

MD2001FX

Bipolar (BJT) Transistor NPN 700 V 12 A 58 W Through Hole ISOWATT-218FX

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberMD2001FX
DescriptionBipolar (BJT) Transistor NPN 700 V 12 A 58 W Through Hole ISOWATT-218FX
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.81USD 2.81
10USD 2.71165USD 27.1165
25USD 2.6133USD 65.3325
100USD 2.51495USD 251.495
250USD 2.4166USD 604.15
500USD 2.31825USD 1,159.125
1,000USD 2.2199USD 2,219.90
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 700 V 12 A 58 W Through Hole ISOWATT-218FX

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
Transistor TypeNPN
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)700 V
Vce Saturation (Max) @ Ib, Ic1.8V @ 1.5A, 6A
Current - Collector Cutoff (Max)200µA
DC Current Gain (hFE) (Min) @ Ic, Vce4.5 @ 6A, 5V
Power - Max58 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseISOWATT218FX
Supplier Device PackageISOWATT-218FX
Base Product NumberMD2001
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