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MD2009DFX STMicroelectronics

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STMicroelectronics

MD2009DFX

Bipolar (BJT) Transistor NPN 700 V 10 A 58 W Through Hole TO-3PF

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberMD2009DFX
DescriptionBipolar (BJT) Transistor NPN 700 V 10 A 58 W Through Hole TO-3PF
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 700 V 10 A 58 W Through Hole TO-3PF

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)700 V
Vce Saturation (Max) @ Ib, Ic2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max)200µA
DC Current Gain (hFE) (Min) @ Ic, Vce5 @ 5.5A, 5V
Power - Max58 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3P-3 Full Pack
Supplier Device PackageTO-3PF
Base Product NumberMD2009
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