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STMicroelectronics

MJD122-1

Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20 W Through Hole TO-251 (IPAK)

Stock0 pcs

Lifecycleactive

PackageStandard

Lead TimeRFQ Required

Product DetailsTransistors - Bipolar (BJT) - Single

ManufacturerSTMicroelectronics

Manufacturer Product NumberMJD122-1

DescriptionBipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20 W Through Hole TO-251 (IPAK)

CategoryTransistors - Bipolar (BJT) - Single

EDA / CAD Models

Price & AvailabilityQuote Required

Bipolar (BJT) Transistor NPN - Darlington 100 V 8 A 20 W Through Hole TO-251 (IPAK)

MfrSTMicroelectronics

Series-

PackageBulk

Product StatusActive

Transistor TypeNPN - Darlington

Current - Collector (Ic) (Max)8 A

Voltage - Collector Emitter Breakdown (Max)100 V

Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A

Current - Collector Cutoff (Max)10µA

DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V

Power - Max20 W

Frequency - Transition-

Operating Temperature150°C (TJ)

Mounting TypeThrough Hole

Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

Supplier Device PackageTO-251 (IPAK)

Base Product NumberMJD122