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SCT040H65G3AG STMicroelectronics

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STMicroelectronics

SCT040H65G3AG

N-Channel 650 V 30A (Tc) 221W (Tc) Surface Mount H2PAK-7

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCT040H65G3AG
DescriptionN-Channel 650 V 30A (Tc) 221W (Tc) Surface Mount H2PAK-7
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 15.58USD 15.58
10USD 15.0347USD 150.347
25USD 14.4894USD 362.235
100USD 13.9441USD 1,394.41
250USD 13.3988USD 3,349.70
500USD 12.8535USD 6,426.75
1,000USD 12.3082USD 12,308.20
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 30A (Tc) 221W (Tc) Surface Mount H2PAK-7

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs55mOhm @ 20A, 18V
Vgs(th) (Max) @ Id4.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs39.5 nC @ 18 V
Vgs (Max)+18V, -5V
Input Capacitance (Ciss) (Max) @ Vds920 pF @ 400 V
FET Feature-
Power Dissipation (Max)221W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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