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SCT1000N170 STMicroelectronics
SCT1000N170 STMicroelectronics

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STMicroelectronics

SCT1000N170

N-Channel 1700 V 7A (Tc) 96W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCT1000N170
DescriptionN-Channel 1700 V 7A (Tc) 96W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 14.54USD 14.54
10USD 14.0311USD 140.311
25USD 13.5222USD 338.055
100USD 13.0133USD 1,301.33
250USD 12.5044USD 3,126.10
500USD 11.9955USD 5,997.75
1,000USD 11.4866USD 11,486.60
  • Product Attributes
  • Ordering Notes

N-Channel 1700 V 7A (Tc) 96W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1700 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs1.3Ohm @ 3A, 20V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs13.3 nC @ 20 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds133 pF @ 1000 V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
Base Product NumberSCT1000
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