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SCT10N120 STMicroelectronics

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STMicroelectronics

SCT10N120

N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCT10N120
DescriptionN-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 11.91USD 11.91
10USD 11.49315USD 114.9315
25USD 11.0763USD 276.9075
100USD 10.65945USD 1,065.945
250USD 10.2426USD 2,560.65
500USD 9.82575USD 4,912.875
1,000USD 9.4089USD 9,408.90
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 12A (Tc) 150W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds290 pF @ 400 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
Base Product NumberSCT10
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