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SCT20N120 STMicroelectronics

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STMicroelectronics

SCT20N120

N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCT20N120
DescriptionN-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 17.24USD 17.24
10USD 16.6366USD 166.366
25USD 16.0332USD 400.83
100USD 15.4298USD 1,542.98
250USD 14.8264USD 3,706.60
500USD 14.223USD 7,111.50
1,000USD 13.6196USD 13,619.60
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 20A (Tc) 175W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs290mOhm @ 10A, 20V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 400 V
FET Feature-
Power Dissipation (Max)175W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
Base Product NumberSCT20
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