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SCT20N120AG STMicroelectronics

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STMicroelectronics

SCT20N120AG

N-Channel 1200 V 20A (Tc) 153W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCT20N120AG
DescriptionN-Channel 1200 V 20A (Tc) 153W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 20.47USD 20.47
10USD 19.75355USD 197.5355
25USD 19.0371USD 475.9275
100USD 18.32065USD 1,832.065
250USD 17.6042USD 4,401.05
500USD 16.88775USD 8,443.875
1,000USD 16.1713USD 16,171.30
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 20A (Tc) 153W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs239mOhm @ 10A, 20V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds650 pF @ 400 V
FET Feature-
Power Dissipation (Max)153W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
Base Product NumberSCT20
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