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SCT30N120 STMicroelectronics

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STMicroelectronics

SCT30N120

N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCT30N120
DescriptionN-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 24.75USD 24.75
10USD 23.88375USD 238.8375
25USD 23.0175USD 575.4375
100USD 22.15125USD 2,215.125
250USD 21.285USD 5,321.25
500USD 20.41875USD 10,209.375
1,000USD 19.5525USD 19,552.50
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 40A (Tc) 270W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs105 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 400 V
FET Feature-
Power Dissipation (Max)270W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
Base Product NumberSCT30
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