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SCT30N120H STMicroelectronics

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STMicroelectronics

SCT30N120H

N-Channel 1200 V 40A (Tc) 270W (Tc) Surface Mount H2Pak-2

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCT30N120H
DescriptionN-Channel 1200 V 40A (Tc) 270W (Tc) Surface Mount H2Pak-2
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 24.51USD 24.51
10USD 23.65215USD 236.5215
25USD 22.7943USD 569.8575
100USD 21.93645USD 2,193.645
250USD 21.0786USD 5,269.65
500USD 20.22075USD 10,110.375
1,000USD 19.3629USD 19,362.90
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 40A (Tc) 270W (Tc) Surface Mount H2Pak-2

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs105 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1700 pF @ 400 V
FET Feature-
Power Dissipation (Max)270W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2Pak-2
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberSCT30
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