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SCTH35N65G2V-7 STMicroelectronics

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STMicroelectronics

SCTH35N65G2V-7

N-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTH35N65G2V-7
DescriptionN-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 16.16USD 16.16
10USD 15.5944USD 155.944
25USD 15.0288USD 375.72
100USD 14.4632USD 1,446.32
250USD 13.8976USD 3,474.40
500USD 13.332USD 6,666.00
1,000USD 12.7664USD 12,766.40
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 45A (Tc) 208W (Tc) Surface Mount H2PAK-7

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Rds On (Max) @ Id, Vgs67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 20 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 400 V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Base Product NumberSCTH35
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