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SCTH40N120G2V-7 STMicroelectronics
SCTH40N120G2V-7 STMicroelectronics

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STMicroelectronics

SCTH40N120G2V-7

N-Channel 1200 V 36A (Tc) 238W (Tc) Surface Mount H2PAK-7

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTH40N120G2V-7
DescriptionN-Channel 1200 V 36A (Tc) 238W (Tc) Surface Mount H2PAK-7
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 20.47USD 20.47
10USD 19.75355USD 197.5355
25USD 19.0371USD 475.9275
100USD 18.32065USD 1,832.065
250USD 17.6042USD 4,401.05
500USD 16.88775USD 8,443.875
1,000USD 16.1713USD 16,171.30
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 36A (Tc) 238W (Tc) Surface Mount H2PAK-7

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs61 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds1233 pF @ 800 V
FET Feature-
Power Dissipation (Max)238W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Base Product NumberSCTH40
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