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SCTH70N120G2V-7 STMicroelectronics
SCTH70N120G2V-7 STMicroelectronics

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STMicroelectronics

SCTH70N120G2V-7

N-Channel 1200 V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTH70N120G2V-7
DescriptionN-Channel 1200 V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 45.46USD 45.46
10USD 43.8689USD 438.689
25USD 42.2778USD 1,056.945
100USD 40.6867USD 4,068.67
250USD 39.0956USD 9,773.90
500USD 37.5045USD 18,752.25
1,000USD 35.9134USD 35,913.40
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 90A (Tc) 469W (Tc) Surface Mount H2PAK-7

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs150 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3540 pF @ 800 V
FET Feature-
Power Dissipation (Max)469W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageH2PAK-7
Package / CaseTO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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SCTH70N120G2V-7 | STMicroelectronics | GQGF Electronic Components