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SCTL90N65G2V STMicroelectronics
SCTL90N65G2V STMicroelectronics

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STMicroelectronics

SCTL90N65G2V

N-Channel 650 V 40A (Tc) 935W (Tc) Surface Mount PowerFlat™ (8x8) HV

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTL90N65G2V
DescriptionN-Channel 650 V 40A (Tc) 935W (Tc) Surface Mount PowerFlat™ (8x8) HV
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 37.63USD 37.63
10USD 36.31295USD 363.1295
25USD 34.9959USD 874.8975
100USD 33.67885USD 3,367.885
250USD 32.3618USD 8,090.45
500USD 31.04475USD 15,522.375
1,000USD 29.7277USD 29,727.70
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 40A (Tc) 935W (Tc) Surface Mount PowerFlat™ (8x8) HV

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs24mOhm @ 40A, 18V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs157 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3380 pF @ 400 V
FET Feature-
Power Dissipation (Max)935W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (8x8) HV
Package / Case8-PowerVDFN
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