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SCTW100N65G2AG STMicroelectronics

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STMicroelectronics

SCTW100N65G2AG

N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTW100N65G2AG
DescriptionN-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 38.12USD 38.12
10USD 36.7858USD 367.858
25USD 35.4516USD 886.29
100USD 34.1174USD 3,411.74
250USD 32.7832USD 8,195.80
500USD 31.449USD 15,724.50
1,000USD 30.1148USD 30,114.80
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 100A (Tc) 420W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs26mOhm @ 50A, 18V
Vgs(th) (Max) @ Id5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs162 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3315 pF @ 520 V
FET Feature-
Power Dissipation (Max)420W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
Base Product NumberSCTW100
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