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SCTW35N65G2VAG STMicroelectronics

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STMicroelectronics

SCTW35N65G2VAG

N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTW35N65G2VAG
DescriptionN-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 19.66USD 19.66
10USD 18.9719USD 189.719
25USD 18.2838USD 457.095
100USD 17.5957USD 1,759.57
250USD 16.9076USD 4,226.90
500USD 16.2195USD 8,109.75
1,000USD 15.5314USD 15,531.40
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesAutomotive, AEC-Q101
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Rds On (Max) @ Id, Vgs67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 20 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds1370 pF @ 400 V
FET Feature-
Power Dissipation (Max)240W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
Base Product NumberSCTW35
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