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SCTW40N120G2V STMicroelectronics
SCTW40N120G2V STMicroelectronics

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STMicroelectronics

SCTW40N120G2V

N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTW40N120G2V
DescriptionN-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 21.82USD 21.82
10USD 21.0563USD 210.563
25USD 20.2926USD 507.315
100USD 19.5289USD 1,952.89
250USD 18.7652USD 4,691.30
500USD 18.0015USD 9,000.75
1,000USD 17.2378USD 17,237.80
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 36A (Tc) 278W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs100mOhm @ 20A, 18V
Vgs(th) (Max) @ Id4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs61 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds1233 pF @ 800 V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
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