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SCTW70N120G2V STMicroelectronics

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STMicroelectronics

SCTW70N120G2V

N-Channel 1200 V 91A (Tc) 547W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTW70N120G2V
DescriptionN-Channel 1200 V 91A (Tc) 547W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 46.61USD 46.61
10USD 44.97865USD 449.7865
25USD 43.3473USD 1,083.6825
100USD 41.71595USD 4,171.595
250USD 40.0846USD 10,021.15
500USD 38.45325USD 19,226.625
1,000USD 36.8219USD 36,821.90
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 91A (Tc) 547W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C91A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs150 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3540 pF @ 800 V
FET Feature-
Power Dissipation (Max)547W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
Base Product NumberSCTW70
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