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SCTW90N65G2V STMicroelectronics

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STMicroelectronics

SCTW90N65G2V

N-Channel 650 V 90A (Tc) 390W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTW90N65G2V
DescriptionN-Channel 650 V 90A (Tc) 390W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 36.64USD 36.64
10USD 35.3576USD 353.576
25USD 34.0752USD 851.88
100USD 32.7928USD 3,279.28
250USD 31.5104USD 7,877.60
500USD 30.228USD 15,114.00
1,000USD 28.9456USD 28,945.60
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 90A (Tc) 390W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs25mOhm @ 50A, 18V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs157 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 400 V
FET Feature-
Power Dissipation (Max)390W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
Base Product NumberSCTW90
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