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SCTWA10N120 STMicroelectronics

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STMicroelectronics

SCTWA10N120

N-Channel 1200 V 12A (Tc) 110W (Tc) Through Hole HiP247™ Long Leads

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTWA10N120
DescriptionN-Channel 1200 V 12A (Tc) 110W (Tc) Through Hole HiP247™ Long Leads
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 10.93USD 10.93
10USD 10.54745USD 105.4745
25USD 10.1649USD 254.1225
100USD 9.78235USD 978.235
250USD 9.3998USD 2,349.95
500USD 9.01725USD 4,508.625
1,000USD 8.6347USD 8,634.70
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 12A (Tc) 110W (Tc) Through Hole HiP247™ Long Leads

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusObsolete
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id3.5V @ 250µA (Typ)
Gate Charge (Qg) (Max) @ Vgs21 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 1000 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™ Long Leads
Package / CaseTO-247-3
Base Product NumberSCTWA10
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