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SCTWA35N65G2V STMicroelectronics

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STMicroelectronics

SCTWA35N65G2V

N-Channel 650 V 45A (Tc) 208W (Tc) Through Hole TO-247 Long Leads

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTWA35N65G2V
DescriptionN-Channel 650 V 45A (Tc) 208W (Tc) Through Hole TO-247 Long Leads
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 18.85USD 18.85
10USD 18.19025USD 181.9025
25USD 17.5305USD 438.2625
100USD 16.87075USD 1,687.075
250USD 16.211USD 4,052.75
500USD 15.55125USD 7,775.625
1,000USD 14.8915USD 14,891.50
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 45A (Tc) 208W (Tc) Through Hole TO-247 Long Leads

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Rds On (Max) @ Id, Vgs72mOhm @ 20A, 20V
Vgs(th) (Max) @ Id3.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs73 nC @ 20 V
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds73000 pF @ 400 V
FET Feature-
Power Dissipation (Max)208W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 Long Leads
Package / CaseTO-247-3
Base Product NumberSCTWA35
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