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SCTWA50N120 STMicroelectronics

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STMicroelectronics

SCTWA50N120

N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTWA50N120
DescriptionN-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 38.53USD 38.53
10USD 37.18145USD 371.8145
25USD 35.8329USD 895.8225
100USD 34.48435USD 3,448.435
250USD 33.1358USD 8,283.95
500USD 31.78725USD 15,893.625
1,000USD 30.4387USD 30,438.70
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 65A (Tc) 318W (Tc) Through Hole HiP247™

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)20V
Rds On (Max) @ Id, Vgs69mOhm @ 40A, 20V
Vgs(th) (Max) @ Id3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs122 nC @ 20 V
Vgs (Max)+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 400 V
FET Feature-
Power Dissipation (Max)318W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™
Package / CaseTO-247-3
Base Product NumberSCTWA50
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