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SCTWA60N120G2-4 STMicroelectronics
SCTWA60N120G2-4 STMicroelectronics

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STMicroelectronics

SCTWA60N120G2-4

N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTWA60N120G2-4
DescriptionN-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 32.93USD 32.93
10USD 31.77745USD 317.7745
25USD 30.6249USD 765.6225
100USD 29.47235USD 2,947.235
250USD 28.3198USD 7,079.95
500USD 27.16725USD 13,583.625
1,000USD 26.0147USD 26,014.70
  • Product Attributes
  • Ordering Notes

N-Channel 1200 V 60A (Tc) 388W (Tc) Through Hole TO-247-4

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs52mOhm @ 30A, 18V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs94 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds1969 pF @ 800 V
FET Feature-
Power Dissipation (Max)388W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
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