GQGF Electronics
EnglishEnglish
USD
SCTWA90N65G2V-4 STMicroelectronics

Image shown is a representation. Verify specifications with the product datasheet.

STMicroelectronics

SCTWA90N65G2V-4

N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTWA90N65G2V-4
DescriptionN-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 38.37USD 38.37
10USD 37.02705USD 370.2705
25USD 35.6841USD 892.1025
100USD 34.34115USD 3,434.115
250USD 32.9982USD 8,249.55
500USD 31.65525USD 15,827.625
1,000USD 30.3123USD 30,312.30
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole HiP247™ Long Leads

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C119A (Tc)
Rds On (Max) @ Id, Vgs24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs157 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3380 pF @ 400 V
FET Feature-
Power Dissipation (Max)565W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageHiP247™ Long Leads
Package / CaseTO-247-3
Base Product NumberSCTWA90
Global Fast Shipping
100% Original Components
Quality Assured & Tested
Technical Support 24/7