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SCTWA90N65G2V STMicroelectronics
SCTWA90N65G2V STMicroelectronics

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STMicroelectronics

SCTWA90N65G2V

N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSCTWA90N65G2V
DescriptionN-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 37.87USD 37.87
10USD 36.54455USD 365.4455
25USD 35.2191USD 880.4775
100USD 33.89365USD 3,389.365
250USD 32.5682USD 8,142.05
500USD 31.24275USD 15,621.375
1,000USD 29.9173USD 29,917.30
  • Product Attributes
  • Ordering Notes

N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C119A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V
Rds On (Max) @ Id, Vgs24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs157 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds3380 pF @ 400 V
FET Feature-
Power Dissipation (Max)565W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247 Long Leads
Package / CaseTO-247-3
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