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SH32N65DM6AG STMicroelectronics
SH32N65DM6AG STMicroelectronics

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STMicroelectronics

SH32N65DM6AG

Mosfet Array 2 N-Channel (Half Bridge) 650V 32A (Tc) 208W (Tc) Surface Mount 9-ACEPACK SMIT

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Arrays
ManufacturerSTMicroelectronics
Manufacturer Product NumberSH32N65DM6AG
DescriptionMosfet Array 2 N-Channel (Half Bridge) 650V 32A (Tc) 208W (Tc) Surface Mount 9-ACEPACK SMIT
CategoryTransistors - FETs, MOSFETs - Arrays
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 21.48USD 21.48
10USD 20.7282USD 207.282
25USD 19.9764USD 499.41
100USD 19.2246USD 1,922.46
250USD 18.4728USD 4,618.20
500USD 17.721USD 8,860.50
1,000USD 16.9692USD 16,969.20
  • Product Attributes
  • Ordering Notes

Mosfet Array 2 N-Channel (Half Bridge) 650V 32A (Tc) 208W (Tc) Surface Mount 9-ACEPACK SMIT

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesECOPACK®
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET Type2 N-Channel (Half Bridge)
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C32A (Tc)
Rds On (Max) @ Id, Vgs97mOhm @ 23A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds2211pF @ 100V
Power - Max208W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case9-PowerSMD
Supplier Device Package9-ACEPACK SMIT
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