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ST2310DHI STMicroelectronics

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STMicroelectronics

ST2310DHI

Bipolar (BJT) Transistor NPN 600 V 12 A 55 W Through Hole ISOWATT-218

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - Bipolar (BJT) - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberST2310DHI
DescriptionBipolar (BJT) Transistor NPN 600 V 12 A 55 W Through Hole ISOWATT-218
CategoryTransistors - Bipolar (BJT) - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 0.00000USD 0.00000
10USD 0.00000USD 0.00000
25USD 0.00000USD 0.00000
100USD 0.00000USD 0.00000
250USD 0.00000USD 0.00000
500USD 0.00000USD 0.00000
1,000USD 0.00000USD 0.00000
  • Product Attributes
  • Ordering Notes

Bipolar (BJT) Transistor NPN 600 V 12 A 55 W Through Hole ISOWATT-218

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
Series-
PackageTube
Product StatusObsolete
Transistor TypeNPN
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)600 V
Vce Saturation (Max) @ Ib, Ic3V @ 1.75A, 7A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce5.5 @ 7A, 5V
Power - Max55 W
Frequency - Transition-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseISOWATT-218-3
Supplier Device PackageISOWATT-218
Base Product NumberST2310
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