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STB155N3LH6 STMicroelectronics

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STMicroelectronics

STB155N3LH6

N-Channel 30 V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTB155N3LH6
DescriptionN-Channel 30 V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 2.79USD 2.79
10USD 2.69235USD 26.9235
25USD 2.5947USD 64.8675
100USD 2.49705USD 249.705
250USD 2.3994USD 599.85
500USD 2.30175USD 1,150.875
1,000USD 2.2041USD 2,204.10
  • Product Attributes
  • Ordering Notes

N-Channel 30 V 80A (Tc) 110W (Tc) Surface Mount D²PAK (TO-263)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesDeepGATE™, STripFET™ VI
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3800 pF @ 25 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberSTB155
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