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STB28N60DM2 STMicroelectronics

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STMicroelectronics

STB28N60DM2

N-Channel 600 V 21A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTB28N60DM2
DescriptionN-Channel 600 V 21A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 3.97USD 3.97
10USD 3.83105USD 38.3105
25USD 3.6921USD 92.3025
100USD 3.55315USD 355.315
250USD 3.4142USD 853.55
500USD 3.27525USD 1,637.625
1,000USD 3.1363USD 3,136.30
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 21A (Tc) 170W (Tc) Surface Mount D²PAK (TO-263)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesMDmesh™ DM2
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 100 V
FET Feature-
Power Dissipation (Max)170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberSTB28
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