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STB28NM60ND STMicroelectronics

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STMicroelectronics

STB28NM60ND

N-Channel 600 V 23A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Stock0 pcs
Lifecycleactive
PackageStandard
Lead TimeRFQ Required
Product DetailsTransistors - FETs, MOSFETs - Single
ManufacturerSTMicroelectronics
Manufacturer Product NumberSTB28NM60ND
DescriptionN-Channel 600 V 23A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)
CategoryTransistors - FETs, MOSFETs - Single
DatasheetView Datasheet
EDA / CAD Models
Price & AvailabilityQuote Required
QuantityUnit PriceExtended Price
1USD 8.54USD 8.54
10USD 8.2411USD 82.411
25USD 7.9422USD 198.555
100USD 7.6433USD 764.33
250USD 7.3444USD 1,836.10
500USD 7.0455USD 3,522.75
1,000USD 6.7466USD 6,746.60
  • Product Attributes
  • Ordering Notes

N-Channel 600 V 23A (Tc) 190W (Tc) Surface Mount D²PAK (TO-263)

Procurement Notes

  • Original manufacturer components sourced globally.
  • Confirm datasheet, packaging and lead time before shipment.
  • Submit RFQ for bulk quantity or unavailable pricing.
MfrSTMicroelectronics
SeriesFDmesh™ II
PackageTape & Reel (TR), Cut Tape (CT), Digi-Reel®
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs62.5 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds2090 pF @ 100 V
FET Feature-
Power Dissipation (Max)190W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product NumberSTB28
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